FDMS4D4N08C Description
This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMS4D4N08C Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 44 A
- Max rDS(on) = 10.4 mW at VGS = 6 V, ID = 22 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant