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FDMS4D4N08C Datasheet N-Channel MOSFET

Manufacturer: onsemi

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General Description

This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode.

Overview

MOSFET – POWERTRENCH), N-Channel Shielded Gate 80 V, 123 A, 4.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 44 A.
  • Max rDS(on) = 10.4 mW at VGS = 6 V, ID = 22 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant Typical.

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