FDMS4D4N08C
Description
This N- Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on- state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Shielded Gate MOSFET Technology
- Max r DS(on) = 4.3 m W at VGS = 10 V, ID = 44 A
- Max r DS(on) = 10.4 m W at VGS = 6 V, ID = 22 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- Ro HS pliant
Typical Applications
- Primary DC- DC MOSFET
- Synchronous Rectifier in DC- DC and AC- DC
- Motor Drive
- Solar
DATA SHEET .onsemi.
ELECTRICAL CONNECTION
D5 D6 D7 D8
4G 3S 2S 1S
N-Channel MOSFET
DDDD
GSS S
Pin 1
Top
Bottom
Power 56 (PQFN8 5x6) CASE 483AE
MARKING DIAGRAM
$Y&Z&3&K FDMS 4D4N08C
$Y &Z &3 &K FDMS4D4N08C
= onsemi Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
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