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FDMS4D4N08C - N-Channel MOSFET

Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 44 A.
  • Max rDS(on) = 10.4 mW at VGS = 6 V, ID = 22 A.
  • 50% Lower Qrr than Other MOSFET Suppliers.
  • Lowers Switching Noise/EMI.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant Typical.

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    MOSFET – POWERTRENCH), N-Channel Shielded Gate 80 V, 123 A, 4.3 mW FDMS4D4N08C Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features  Shielded Gate MOSFET Technology  Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 44 A  Max rDS(on) = 10.4 mW at VGS = 6 V, ID = 22 A  50% Lower Qrr than Other MOSFET Suppliers  Lowers Switching Noise/EMI  MSL1 Robust Package Design  100% UIL Tested  RoHS Compliant Typical Applications  Primary DC−DC MOSFET  Synchronous Rectifier in DC−DC and AC−DC  Motor Drive  Solar DATA SHEET www.onsemi.
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