onsemi FDS4480
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.| Part No. | FDS4480 |
|---|---|
| Datasheet | FDS4480 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
GENERAL DESCRIPTION
● 10.8 A, 40 V. RDS(ON) = 12 mΩ @ VGS = 10 V● Low gate charge (29 nC)
● High performance trench technology for extremely low RDS(ON)
APPLICATIONS
● DC/DC converter● High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SSSS SS GG 5 4 6 3 7 2 8 1
ABSOLUTE MAXIMUM RATINGS
TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS4480 FDS4480 13’’ Ratings 40 +30/–20 10.8 45 2.5 1.4 1.2 –55 to +175 50 125 25 Tape width 12mm Units V V A W °C °C/W °C/W °C/W Quantity 2500 units ©2002 Semiconductor Components Industries, LLC.
