GENERAL DESCRIPTION
FEATURES
Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A Extended VGS range (-25V) for battery applications resistance. HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant Qualified to AEC Q101 D D D D 5 4 6 3 G 7 2 SO-8 SS S 8 1 MOSFET MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Parameter (Note1a) Power Dissipation for Single Operation (Note1a) PD TJ, TSTG Operating and Storage Temperature (Note1b) (Note1c) Ratin...
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