onsemi FDS6690AS
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology.| Part No. | FDS6690AS |
|---|---|
| Datasheet | FDS6690AS Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
GENERAL DESCRIPTION
The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.● 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V
● Includes SyncFET Schottky diode
● Low gate charge (16nC typical)
● High performance trench technology for extremely low RDS(ON)
● High power and current handling capability
APPLICATIONS
● DC/DC converter● Low side notebooks D D D D SO-8 G SS S 5 4 6 3 7 2 8 1
ABSOLUTE MAXIMUM RATINGS
TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Infor...
