onsemi FDS6898AZ-F085
The diode connected between the gate and source serves only as protection against ESD.| Part No. | FDS6898AZ-F085 |
|---|---|
| Datasheet | FDS6898AZ-F085 Download |
| Manufacturer |  onsemi |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.● 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V
● Low gate charge (16 nC typical)
● ESD protection diode (note 3) These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● High performance trench technology for extremely low RDS(ON)
● High power and current handling capability
● Qualified to AEC Q101
● RoHS Compliant DD2DD1DD1 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 4 6 Q1 3 7 2 Q2 8 1
ABSOLUTE MAXIMUM RATINGS
TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (N...
