onsemi FDS6986AS
The FDS6986AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses.| Part No. | FDS6986AS |
|---|---|
| Datasheet | FDS6986AS Download |
| Manufacturer |  onsemi |
| Description | Dual Notebook Power Supply N-Channel FET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. Q2 also includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology.FEATURES
● Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode 7.9A, 30V RDS(on) = 20 mΩ @ VGS = 10V RDS(on) = 28 mΩ @ VGS = 4.5V● Q1: Optimized for low switching losses Low gate charge (10 nC typical) 6.5A, 30V RDS(on) = 29 mΩ @ VGS = 10V RDS(on) = 38 mΩ @ VGS = 4.5V D2D/S21/S1D1 D1 D D D D G2 S2 G1S1/D2 SO-8 Pin 1 SO-8 G SS S
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation (Note 1a) Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance...
