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FGA40N65SMD - Field Stop IGBT

General Description

field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature: TJ = 175C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ. ) @ IC = 40 A.
  • Fast Switching: EOFF = 6.5 mJ/A.
  • Tighten Parameter Distribution.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Field Stop IGBT 650 V, 40 A FGA40N65SMD General Description Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features  Maximum Junction Temperature: TJ = 175C  Positive Temperature Co−efficient for Easy Parallel Operating  High Current Capability  Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 40 A  Fast Switching: EOFF = 6.5 mJ/A  Tighten Parameter Distribution  These Devices are Pb−Free and are RoHS Compliant Applications  Solar Inverter, UPS, Welder, Induction Heating  Telecom, ESS DATA SHEET www.onsemi.