FGAF30S65AQ Datasheet PDF

FEATURES

● Maximum Junction Temperature: TJ = 175°C
● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.) @ IC = 30 A
● 100% of the Parts Tested for ILM (Note 1)
● High Input Impedance
● Fast Switching
● Tighten Parameter Distribution
● IGBT with Monolithic Reverse Conducting Diode
● This Device is Pb−Free and is RoHS Compliant Typical

APPLICATIONS

● PFC, Welder

MAXIMUM RATINGS

Rating Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current @TC = 25°C IC @TC = 100°C 60 A 30 Pulsed Collector Current (Note 1) ILM 90 A Pulsed Collector Current (Note 2) ICM 90 A Diode Forward Current @TC = 25°C IF @ TC = 100°C 30 A 15 Pulsed Diode Maximum Forward Current IFM 90 A Maximum Power Dissipation@TC = 25°C PD @ TC = 100°C 83 W 42 Operating Junction / Storage Temperature TJ, TSTG −55 to °C Range +175 Maximum Lead Temp. for Soldering Pur- TL poses, 1/8″ from case for 5 seconds 260 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device.