onsemi FGD2040G3-F085
IGBT
| Part No. | FGD2040G3-F085 |
|---|---|
| Datasheet | FGD2040G3-F085 Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 200 mJ at TJ = 25°C● Low Saturation Voltage
● Logic Level Gate Drive
● AEC−Q101 Qualified and PPAP Capable
● RoHS Compliant
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● High Current Ignition System
● Coil on Plug
APPLICATIONS
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Symbol Parameter Value Units BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ, TSTG Collector−to−Emitter Breakdown Voltage (IC = 1 mA) Emitter−to−Collector Voltage − Reverse Battery Condition (IC = 10 mA) ISCIS = 11.5 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ISCIS = 9.1 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2) Collector Current Continuous at VGE = 5.0 V, TC = 25°C Collector Current Continuous at VGE = 5.0 V, TC = 110°C Gate−to−Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature Range 400 V 28 V 200 mJ 125 mJ 23.6 A 13.6 A ±10 125 0.83 −55 to 175 V W W/°C °C TL Lead Tempe...
