onsemi FGD3040G2-F085C
N-Channel IGBT
| Part No. | FGD3040G2-F085C |
|---|---|
| Datasheet | FGD3040G2-F085C Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 300 mJ at TJ = 25°C● Logic Level Gate Drive
● AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● High Current Ignition System
● Coil on Plug Application
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 28 V ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ, TSTG ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ISCIS = 10.8 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2) Collector Current Continuous at VGE = 5.0 V, TC = 25°C Collector Current Continuous at VGE = 5.0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature 300 170 41 25.6 ±10 150 1 −55 to +175 mJ mJ A A V W W/°C °C TL Lead Temperat...
