onsemi FGD3245G2-F085V
N-Channel IGBT
| Part No. | FGD3245G2-F085V |
|---|---|
| Datasheet | FGD3245G2-F085V Download |
| Manufacturer |  onsemi |
| Description | N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● SCIS Energy = 320 mJ at TJ = 25°C● Logic Level Gate Drive
● Low Saturation Voltage
● AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Automotive Ignition Coil Driver Circuits● High Current Ignition System
● Coil on Plug Application
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 450 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 28 V ESCIS25 ISCIS = 14.6 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ESCIS150 ISCIS = 10.9 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2) IC25 Collector Current Continuous at VGE = 4.0 V, TC = 25°C IC110 Collector Current Continuous at VGE = 4.0 V, TC = 110°C VGEM Gate to Emitter Voltage Continuous PD Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C TJ, TSTG Operating Junction and Storage Temperature 320 180 23 23 ±10 150 1.1 −55 to +175 mJ mJ A A V...
