FGD4536 Datasheet PDF

FEATURES

● High Current Capability
● Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A
● High Input Impedance
● Fast Switching
● RoHS Compliant

APPLICATIONS

● PDP TV, Consumer Appliances

GENERAL DESCRIPTION

Using novel trench IGBT technology, ON Semiconductor’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and switching losses are essential. C G E TO-252/D-PAK

ABSOLUTE MAXIMUM RATINGS

Symbol VCES VGES IC pulse(1)* PD TJ Tstg TL

DESCRIPTION

Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter R●JC(IGBT) R●JA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: (1) Half Sine Wave, D < 0.01, pluse width < 1sec * Ic_pluse limited by max Tj Ratings 360  30 220 125 50 -55 to +150 -55 to +150 300 Typ. - Max.