onsemi FGH75T65SHD
This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Telecom, ESS, PFC C G E E C G TO−247−3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH75T65 SHD $Y &Z &3 &K FGH75T65SHD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. for Soldering Purposes, 1/8” from Case for 5 Seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.| Part No. | FGH75T65SHD |
|---|---|
| Datasheet | FGH75T65SHD Download |
| Manufacturer |  onsemi |
| Description | IGBT |
| Buy | Stock & Price |
DESCRIPTION
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.FEATURES
● Maximum Junction Temperature: TJ = 175°C● Positive Temperature Co−efficient for Easy Parallel Operating
● High Current Capability
● Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A
● 100% of the Parts Tested for ILM (Note 1)
● High Input Impedance
● Fast Switching
● Tighten Parameter Distribution
● © Semiconductor Components Industries, LLC, 2014 1 November, 2020 − Rev. 4 Publication Order Number: FGH75T65SHD/D FGH75T65SHD
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Symbol FGH75T65SHD−F155 Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 650 V VGES ±20 V ±30 V Collector Current TC = 25°C IC 150 A Collector Current TC = 100°C 75 A Pulsed Collector Current (N...
