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FGY120T65SPD

FGY120T65SPD is Field Stop Trench IGBT manufactured by onsemi.
FGY120T65SPD datasheet preview

FGY120T65SPD Datasheet

Part number FGY120T65SPD
Datasheet FGY120T65SPD Datasheet PDF (Download)
File Size 221.22 KB
Manufacturer onsemi
Description Field Stop Trench IGBT
FGY120T65SPD page 2 FGY120T65SPD page 3

FGY120T65SPD Overview

Field Stop Trench IGBT with Soft Fast Recovery Diode 120 A, 650 V FGY120T65SPD FGY120T65SPD offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI. Meanwhile, this part also offers an advantage of outstanding parallel operation performance with balance current sharing.

FGY120T65SPD Key Features

  • Very Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 120 A
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • Tight Parameter Distribution
  • High Input Impedance
  • 100% of the Parts are Tested for ILM
  • Short Circuit Ruggedness
  • Co-packed with Soft Fast Recovery Diode

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