FQB4N80
Description
This N-Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 3.9 A, 800 V, RDS(on) = 3.6 W (Max.) @ VGS = 10 V, ID = 1.95 A
- Low Gate Charge (Typ. 19 n C)
- Low Crss (Typ. 8.6 p F)
- 100% Avalanche Tested
- This Device is Pb-Free and Halide Free
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Rating
Value Unit
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak...
