FQB4N80 Overview
This N-Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB4N80 Key Features
- 3.9 A, 800 V, RDS(on) = 3.6 W (Max.) @ VGS = 10 V, ID = 1.95 A
- Low Gate Charge (Typ. 19 nC)
- Low Crss (Typ. 8.6 pF)
- 100% Avalanche Tested
- This Device is Pb-Free and Halide Free
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed (Note 1)
- Derate above 25°C
- Rev. 3
