onsemi FQD3P50
This P−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.| Part No. | FQD3P50 |
|---|---|
| Datasheet | FQD3P50 Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.FEATURES
● −2.1 A, −500 V, RDS(on) = 4.9 W (Max.) @ VGS = −10 V, ID = −1.05 A● Low Gate Charge (Typ. 18 nC)
● Low Crss (Typ. 9.5 pF)
● 100% Avalanche Tested
● These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TC = 20°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain−Source Voltage −500 V ID Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) A −2.1 −1.33 IDM VGSS Drain Current − Pulsed (Note 1) Gate−Source Voltage −8.4 A ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ IAR Avalanche Current (Note 1) −2.1 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) −4.5 V/ns PD Power Dissipation (TA = 25°C) (Note 4) Power Dissipation (TC = 25°C) − Derate above 25°C 2.5 W 50 W 0.4 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum...
