onsemi FQD4N25
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.| Part No. | FQD4N25 |
|---|---|
| Datasheet | FQD4N25 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.FEATURES
● 3 A, 250 V, RDS(on) = 1.75 Ω (Max.) @ VGS = 10 V, ID = 1.5 A● Low Gate Charge (Typ. 4.3 nC)
● Low Crss (Typ. 4.8 pF)
● 100% Avalanche Tested G S D D-PAK D G
ABSOLUTE MAXIMUM RATINGS
TC = 25°C unless otherwise noted. + 7 7 + < 7 < !$ : + 2 - )*8 4 2 - .''8 4 : ; + : (! < (! , ! (! < : > , ! !$ : 2 - )*8 4 ? : 2 - )*8 4 " ! )*8 , Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. S FQD4N25TM-WS )*' &' .9 .) ± &' *) &' &/ ** )* &/ ' )9 ** A.*' &'' + ( ( ( + = ( = +$ @ @ @$8 8 8 Thermal Characteristics Symbol Parameter R●JC R●JA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. FQD4N25TM_WS 3.4 110 50 Unit oC/W ©2005 Semiconductor Components Industries, LLC. October-2017,Rev.3 Publ...
