onsemi FQP17P10
P-Channel MOSFET
FQP17P10 Specifications
- Package : TO-220AB
- Mount Type : Through Hole
- Current Rating : -16.5A
- Breakdown Voltage : -100V
- Threshold Voltage : -4V
- RDS(on) Max : 190mΩ
- Input Capacitance : 1.1nF
- Min Breakdown Voltage : 100V
- Terminals : 3
- Channels : 1
- Rise Time : 200ns
- Fall Time : 100ns
- Max Power Dissipation : 100W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | FQP17P10 |
|---|---|
| Datasheet | FQP17P10 Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● −16.5 A, −100 V, RDS(on) = 190 mW (Max.) at VGS = −10 V, ID = −8.25 A● Low Gate Charge (Typ. 30 nC)
● Low Crss (Typ. 100 pF)
● 100% Avalanche Tested
● 175°C Maximum Junction Temperature Rating
● This is a Pb−Free Device
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain−Source Voltage Drain Current Drain Current Continuous (TC = 25°C) Continuous (TC = 100°C) Pulsed (Note 1) Gate−Source Voltage Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) −100 −16.5 −11.7 −66 ±30 580 −16.5 10 −6.0 V A A V mJ A mJ V/ns PD Power (TC = 25°C) Dissipation Derate above 25°C 100 W 0.67 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to °C +175 TL Maximum Lead Temperature for 300 °C Soldering, 1/8″ from Case for 5 Seconds Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
