onsemi FQP47P06
This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.| Part No. | FQP47P06 |
|---|---|
| Datasheet | FQP47P06 Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.FEATURES
● −47 A, −60 V, RDS(on) = 26 mW (Max.) @ VGS = −10 V, ID = −23.5 A● Low Gate Charge (Typ. 84 nC)
● Low Crss (Typ. 320 pF)
● 100% Avalanche Tested
● 175°C Maximum Junction Temperature Rating DATA SHEET VDSS −60 V RDS(on) MAX 26 mW @ −10 V ID MAX −47 A S G D P−Channel MOSFET GDS TO−220−3LD CASE 340AT MARKING DIAGRAM $Y&Z&3&K FQP 47P06 $Y &Z &3 &K FQP47P06 = Logo = Assembly Plant Code = 3−Digit Plant Code = 2−Digits Lot Run Traceability Code = Specific Device Code ORDERING INFORMATION Device Package Shipping FQP47P06 TO−220−3LD 1000 Units / Tube © Semiconductor Components Industries, LLC, 2001 1 May, 2022 − Rev. 3 Publication Order Number: FQP47P06/D FQP47P06
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) Symbol Parameter FQP47P06 Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain−Source Voltage Drain Current Drain Cur...
