onsemi FQP9N30
This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.| Part No. | FQP9N30 |
|---|---|
| Datasheet | FQP9N30 Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.FEATURES
● 9.0 A, 300 V, RDS(on) = 450 mW (Max.) @ VGS = 10 V, ID = 4.5 A● Low Gate Charge (Typ. 17 nC)
● Low Crss (Typ. 16 pF)
● 100% Avalanche Tested
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted.) Parameter Symbol Value Unit Drain−Source Voltage Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) Drain Current − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) VDSS ID IDM VGSS EAS IAR EAR dv/dt 300 V 9.0 A 5.7 A 36 A ±30 V 420 mJ 9.0 A 9.8 mJ 4.5 V/ns Power Dissipation (TC = 25°C) PD − Derate above 25°C 98 W 0.78 W/°C Operating and Storage Temperature Range TJ, TSTG −55 to +150 °C Maximum Lead Temperature for Solder- TL ing, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
