onsemi FQP9N90C
This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.| Part No. | FQP9N90C |
|---|---|
| Datasheet | FQP9N90C Download |
| Manufacturer |  onsemi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.FEATURES
● 8 A 900 V, RDS(on) = 1.4 W (Max.) @ VGS = 10 V, ID = 4 A● Low Gate Charge (Typ. 45 nC)
● Low Crss (Typ. 14 pF)
● 100% Avalanche Tested
● This Device is Pb−Free Halide, Free and RoHS Compliant. DATA SHEET GDS TO−220 CASE 221A GDS TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT D G S MARKING DIAGRAM FQPF 9N90CT AYWWZZ FQP9N90C, FQPF9N90CT A YWW ZZ = Specific Device Code = Assembly Location = Date Code (Year and Week) = Assembly Lot Code ORDERING INFORMATION Device FQP9N90C FQPF9N90CT Package TO−220 (Pb−Free) TO−220−3F (Pb−Free) Shipping† 1000 Units / Tube 1000 Units / Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 March, 2024 − Rev 3 Publication Order Number...
