onsemi H11F3M
The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in−line packages.H11F3M Specifications
- Package : DIP
- Mount Type : Through Hole
- Forward Current : 60mA
- Min Breakdown Voltage : 15V
- Reverse Breakdown Voltage : 5V
- Forward Voltage : 1.75V
- Channels : 1
- Isolation Voltage : 7500Vrms
- Max Power Dissipation : 100mW
- Power Dissipation : 300mW
- Max Operating Temp : 100°C
- Min Operating Temp : -40°C
Source:
Octopart
| Part No. | H11F3M |
|---|---|
| Datasheet | H11F3M Download |
| Manufacturer |  onsemi |
| Description | Photo FET Optocouplers |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● As a Remote Variable Resistor: ♦ ≤ 100 W to ≥ 300 MW ♦ ≤15 pF Shunt Capacitance ♦ ≥100 GW I/O Isolation Resistance● As an Analog Switch: ♦ Extremely Low Offset Voltage ♦ 60 Vpk−pk Signal Capability ♦ No Charge Injection or Latch−Up ♦ UL Recognized (File #E90700)
● These are Pb−Free Devices Application
● As a Remote Variable Resistor: ♦ Isolated Variable Attenuator ♦ Automatic Gain Control ♦ Active Filter Fine Tuning/Band Switching
● As an Analog Switch: ♦ Isolated Sample and Hold Circuit ♦ Multiplexed, Optically Isolated A/D Conversion DATA SHEET 6 1 6 1 PDIP6 8.51x6.35, 2.54P CASE 646BX PDIP6 8.51x6.35, 2.54P CASE 646BY 6 1 PDIP6 8.51x6.35, 2.54P CASE 646BZ MARKING DIAGRAM ON H11F1 VXYYQ H11F1 = Specific Device Code V = VDE Mark (Only appears on parts ordered with VDE option − See order entry table) X = One−Digit Year Code, e.g., “7” YY = Two Digit Work Week Ranging from “01” to “53” Q = Assembly Package Code SCHEMATIC ANODE 1 OUTPUT 6 TERM. CATHODE 2 3 5 4 OUTPUT TERM.
