HMHA2801C Description
The HMHA281 and HMHA2801 series devices consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a pact 4−pin mini−flat package. The lead pitch is 1.27 mm.
HMHA2801C Key Features
- pact 4-Pin Package
- 2.4 mm Maximum Standoff Height
- Half-Pitch Leads for Optimum Board Space Savings
- Current Transfer Ratio
- HMHA281: 50% to 600%
- HMHA2801: 80% to 600%
- HMHA2801A: 80% to 160%
- HMHA2801B: 50% to 150%
- HMHA2801C: 50% to 100%
- Safety and Regulatory Approvals