onsemi IRF644B
This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.| Part No. | IRF644B |
|---|---|
| Datasheet | IRF644B Download |
| Manufacturer |  onsemi |
| Description | N-Channel BFET MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.FEATURES
● 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V● Low gate charge (Typ. 47 nC)
● Low Crss (Typ. 30 pF)
● Fast Switching
● 100% Avalanche Tested
● Improved dv/dt Capability D GDS TO-220 G
ABSOLUTE MAXIMUM RATINGS
TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) S IRF644B_FP001 250 14 8.9 56 ± 30 480 14 13.9 4.8 139 1.11 -55 to +150 300 Thermal Character...
