onsemi IRFR220B
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.| Part No. | IRFR220B |
|---|---|
| Datasheet | IRFR220B Download |
| Manufacturer |  onsemi |
| Description | 200V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.FEATURES
● 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V● Low gate charge ( typical 12 nC)
● Low Crss ( typical 10 pF)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability D D ! GS D-PAK IRFR Series GDS I-PAK IRFU Series
ABSOLUTE MAXIMUM RATINGS
TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds G!● ◀▲
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