DESCRIPTION
Sourced from process 88. ABSOLUTE MAXIMUM RATINGS
(Note 1, Note 2) Values are at TA = 25 °C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage −30 V VGS IGF TJ, TSTG Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 30 V 50 mA −55 to + 150 °C Stresses exceeding those listed in the MAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150 °C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. THERMAL CHARACTERISTICS Values are at TA = 25 °C unless otherwise noted. Max. Symbol PD Parameter Total Device Dissipation Derate Above 25 °C J176 (Note 3) 350 2.8 MMBFJ176, (Note 3) Unit 225 mW 1.8 mW/°C RθJC Thermal Resistance, 125 Junction to Case − °C/W RθJA Thermal Resistance, 357 556 °C/W Junction to Ambient 3.
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