onsemi J665
P-Channl Silicon MOSFET
| Part No. | J665 |
|---|---|
| Datasheet | J665 Download |
| Manufacturer |  onsemi |
| Description | P-Channl Silicon MOSFET |
| Buy | Stock & Price |
FEATURES
● ON-resistance RDS(on)1=59mΩ(typ.)● 4V drive
● Input capacitance Ciss=4200pF (typ.) Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--27A (Fig.1) *2 L≤100μH, single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings Unit --100 V ±20 V --27 A --108 A 65 W 150 °C --55 to +150 °C 48 mJ --27 A Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7535-001 3.0 10.0 4 1 23 1.27 0.8 2.54 2.54 0 to 0.25 2.4 1.4 9.2 1.2 13.4...
