onsemi K3816
N-Channel Power MOSFET
FEATURES
● ON-resistance RDS(on)1=20mΩ(typ.)● Input capacitance Ciss=1780pF(typ.)
● 4V drive Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 40 160 1.65 50 Unit V V A A W W Continued on next page. Package Dimensions unit : mm (typ) 7537-001 Package Dimensions unit : mm (typ) 7535-001 2SK3816-1E 10.0 4.5 8.0 1.3 10.0 4 4.5 1.3 2SK3816-DL-1E 8.0 0.9 1.75 1.4 9.2 1.2 13.4 0.9 1.75 3.0 9.2 1.2 1.35 7.9 7.9 5.3 5.3 3.0 1.47 1.27 0.8 123 2.54 2.54 2.4 13.08 0.5 1 : Gate 2 : Drain 3 : Source TO-262-3L 1 23 2.54 1.27 0.8 2.54 0 to 0.25 2.4 0.254 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain TO-263-2L Ordering & Package