DESCRIPTION
The sensor also utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. Optional microlenses focus the majority of the light through the transparent gate, increasing the optical response further. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Full Frame CCD, Enhanced Response Total Number of Pixels 784 (H) × 520 (V) Number of Active Pixels 768 (H) × 512 (V) = approx. 0.4 Mp Pixel Size 9.0 mm (H) × 9.0 mm (V) Active Image Size 6.91 mm (H) × 4.6 mm (V) 8.3 mm (Diagonal) 1/2″ Optical Format Die Size 8.4 mm (H) × 5.5 mm (V) Aspect Ratio 3:2 Saturation Signal 100,000 electrons Quantum Efficiency (with Microlens) Peak: 77% 400 nm: 45% Quantum Efficiency (No Microlens) Peak: 65% 400 nm: 30% Output Sensitivity 10 mV/e− Read Noise Dark Current 15 electrons < 10 pA/cm2 at 25°C Dark Current Doubling Temperature 6.3°C Dynamic Range 76 dB Charge Transfer Efficiency > 0.
onsemi
