DESCRIPTION
The sensor also utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. Selectable on-chip output amplifiers allow operation to be optimized for different imaging needs: Low Noise (when using the high-sensitivity output) or Maximum Dynamic Range (when using the low-sensitivity output). Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Full Frame CCD Pixel Count 1024 (H) × 1024 (V) Pixel Size 24 mm (H) × 24 mm (V) Active Image Size 24.6 mm (H) × 24.6 mm (V) 34.8 mm (Diagonal) APS−H Optical Format Chip Size 28.6 mm (H) × 25.5 mm (V) Optical Fill-Factor 100% Saturation Signal High Sensitivity Output High Dynamic Range 240,000 electrons 650,000 electrons Output Sensitivity High Sensitivity Output High Dynamic Range 11 mV/electron 2 mV/electron Readout Noise (1 MHz) Dark Current (25°C, Accumulation Mode) 15 electrons rms < 30 pA/cm2 Dark Current Doubling Rate 5−6°C...
onsemi
