onsemi KSA1010
PNP Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
(TC = 25C unless otherwise noted.) Symbol Parameter Ratings Unit VCBO Collector−Base Voltage −100 V VCEO Collector−Emitter Voltage −100 V VEBO Emitter−Base Voltage −7 V IC Collector Current (DC) −7 A ICP Collector Current (Pulse) (Note 1) −15 A IB Base Current −3.5 A PC Collector Dissipation (TC = 25C) 40 W Collector Dissipation (TA = 25C) 1.5 W TJ Junction Temperature 150 C TSTG Storage Temperature −55 to 150 C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. PW 300 ms, Duty Cycle 10%. MARKING DIAGRAM YWWZZ A1010−Y YWW ZZ A1010 Y = Date Code (Year & Week) = Lot Run Traceability Code = Specific Device Code = hFE Grade ORDERING INFORMATION Device KSA1010YTU Package TO−220−3LD (Pb−Free) Shipping 1000 Units / TubeELECTRICAL CHARACTERISTICS
(TC = 25C unless otherwise noted.) Symbol Parame...