Datasheet4U.com

KSA1010 Datasheet PDF

onsemi KSA1010

PNP Epitaxial Silicon Transistor

Part No. KSA1010
Datasheet KSA1010 Download
Manufacturer
onsemi
Description PNP Epitaxial Silicon Transistor
Buy Stock & Price
KSA1010 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TC = 25C unless otherwise noted.) Symbol Parameter Ratings Unit VCBO Collector−Base Voltage −100 V VCEO Collector−Emitter Voltage −100 V VEBO Emitter−Base Voltage −7 V IC Collector Current (DC) −7 A ICP Collector Current (Pulse) (Note 1) −15 A IB Base Current −3.5 A PC Collector Dissipation (TC = 25C) 40 W Collector Dissipation (TA = 25C) 1.5 W TJ Junction Temperature 150 C TSTG Storage Temperature −55 to 150 C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. PW  300 ms, Duty Cycle  10%. MARKING DIAGRAM YWWZZ A1010−Y YWW ZZ A1010 Y = Date Code (Year & Week) = Lot Run Traceability Code = Specific Device Code = hFE Grade ORDERING INFORMATION Device KSA1010YTU Package TO−220−3LD (Pb−Free) Shipping 1000 Units / Tube

ELECTRICAL CHARACTERISTICS

(TC = 25C unless otherwise noted.) Symbol Parame...
KSA1010 page 2 preview KSA1010 page 3 preview