onsemi KSA916
PNP Epitaxial Silicon Transistor
| Part No. | KSA916 |
|---|---|
| Datasheet | KSA916 Download |
| Manufacturer |  onsemi |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Audio Power Amplifier● Driver Stage Amplifier
● Complement to KSC2316
ABSOLUTE MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage −120 V VCEO Collector−Emitter Voltage −120 V VEBO Emitter−Base Voltage −5 V IC Collector Current −800 mA TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) (Note 1) Symbol Parameter Value Unit PD RθJA Power Dissipation, by RθJA Power Dissipation, by RθJC Derate Above 25_C, by RθJA Derate Above 25_C, by RθJC Thermal Resistance, Junction−to−Ambient 900 mW 3 W 7.2 mW/°C 24 mW/°C 130 °C/W RθJC Thermal Resistance, Junction−to−Case 41 °C/W 1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size.
