onsemi KSC1815
NPN Epitaxial Silicon Transistor
| Part No. | KSC1815 |
|---|---|
| Datasheet | KSC1815 Download |
| Manufacturer |  onsemi |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Audio Frequency Amplifier and High-Frequency OSC● Complement to KSA1015
● Collector-Base Voltage: VCBO = 60 V
● This is a Pb-Free Device
MAXIMUM RATINGS
(Values are at TA = 25 °C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 150 mA IB Base Current 50 mA TJ Junction Temperature 150 °C TSTG Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Values are at TA = 25 °C unless otherwise noted.) (Note 1) Symbol Parameter Max. Unit PD Total Device Dissipation 400 mW Derate Above 25 °C 3.2 mW/°C RqJA Thermal Resistance, Junction to Ambient 312 °C/W 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
