onsemi KSC1845
NPN Epitaxial Silicon Transistor
| Part No. | KSC1845 |
|---|---|
| Datasheet | KSC1845 Download |
| Manufacturer |  onsemi |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Audio Frequency Low−Noise Amplifier● Complement to KSA992
● This is a Pb−Free Device
MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 120 V VCEO Collector−Emitter Voltage 120 V VEBO Emitter−Base Voltage 5 V IC Collector Current 50 mA IB Base Current 10 mA TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) (Note 1) Symbol Parameter Value Unit PD Power Dissipation Derate Above 25°C 500 mW 4 mW/°C RqJA Thermal Resistance, Junction−to−Ambient 250 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. DATA SHEET 12 3 1. Emitter 2. Collector 3. B...
