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KSC2383 Datasheet PDF

onsemi KSC2383

NPN Epitaxial Silicon Transistor

Part No. KSC2383
Datasheet KSC2383 Download
Manufacturer
onsemi
Description NPN Epitaxial Silicon Transistor
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KSC2383 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 160 V VCEO Collector−Emitter Voltage 160 V VEBO Emitter−Base Voltage 6 V IC Collector Current 1 A IB Base Current 0.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) (Note 1) Symbol Parameter Value Unit PD Power Dissipation Derate Above 25_C 900 mW 7.2 mW/°C RθJA Thermal Resistance, Junction−to−Ambient 138 °C/W 1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. TO−92 3 LF CASE 135AM MARKING DIAGRAM AC2 383X YWW 1: Emitter 2: Collector 3: Base 1 23 A C2383 X YWW = Assembly Code = Device Code...
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