onsemi KSC2690A
NPN Epitaxial Silicon Transistor
| Part No. | KSC2690A |
|---|---|
| Datasheet | KSC2690A Download |
| Manufacturer |  onsemi |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Complement to KSA1220A● This is a Pb−Free Device
APPLICATIONS
● Audio Frequency● High Frequency Power Amplifier
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Symbol Parameter Ratings Units VCBO Collector−Base Voltage 160 V VCEO Collector−Emitter Voltage 160 V VEBO Emitter−Base Voltage 5 V IC Collector Current (DC) 1.2 A ICP Collector Current (Pulse) * 2.5 A IB Base Current (DC) 0.3 A PC Collector Dissipation, TA = 25°C TC = 25°C 1.2 W 20 TJ Junction Temperature 150 °C TSTG Storage Temperature −55 ~ 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *PW ≤ 10 ms, Duty Cycle ≤ 50% DATA SHEET 1. Emitter 2. Collector 3. Base TO−126−3LD CASE 340AS MARKING DIAGRAM &3 C2690A−Y &3 = 3−Digit Date Code C2690A−Y = Specific Device Code ORDERING INFORMATION Device Package KSC2690AYS TO−126−3LD (Pb−Free) K...
