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KSD882 - NPN Epitaxial Silicon Transistor

Datasheet Summary

Description

TO 126

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

  • Low Speed Switching.
  • Complement to KSB772.

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Datasheet preview – KSD882

Datasheet Details

Part number KSD882
Manufacturer onsemi
File Size 282.04 KB
Description NPN Epitaxial Silicon Transistor
Datasheet download datasheet KSD882 Datasheet
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Full PDF Text Transcription

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NPN Epitaxial Silicon Transistor KSD882 Recommended Applications • Audio Frequency Power Amplifier Features • Low Speed Switching • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1) Symbol Parameter BVCBO BVCEO BVEBO IC ICP IB PD Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current (DC) Collector Current (Pulse) (Note 2) Base Current Total Device Dissipation, TC = 25°C TA = 25°C TJ, TSTG Junction and Storage Temperature Ratings 40 30 5 3 7 0.6 10 1 −55 ~ +150 Units V V V A A A W °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.
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