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KSP43 - NPN Epitaxial Silicon Transistor

Download the KSP43 datasheet PDF. This datasheet also covers the KSP42 variant, as both devices belong to the same npn epitaxial silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

TO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Key Features

  • Collector.
  • Emitter Voltage:.
  • KSP42: VCEO = 300 V.
  • KSP43: VCEO = 200 V.
  • Collector Dissipation: PC (max. ) = 625 mW.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KSP42-onsemi.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KSP43
Manufacturer onsemi
File Size 201.00 KB
Description NPN Epitaxial Silicon Transistor
Datasheet download datasheet KSP43 Datasheet

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Other Datasheets by onsemi

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor KSP42, KSP43 Features • Collector−Emitter Voltage: ♦ KSP42: VCEO = 300 V ♦ KSP43: VCEO = 200 V • Collector Dissipation: PC (max.) = 625 mW • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector−Base Voltage KSP42 300 V KSP43 200 VCEO Collector−Emitter Voltage KSP42 300 V KSP43 200 VEBO Emitter−Base Voltage 6 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.