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KSP43 - NPN Epitaxial Silicon Transistor

This page provides the datasheet information for the KSP43, a member of the KSP42 NPN Epitaxial Silicon Transistor family.

Datasheet Summary

Description

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Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

  • Collector.
  • Emitter Voltage:.
  • KSP42: VCEO = 300 V.
  • KSP43: VCEO = 200 V.
  • Collector Dissipation: PC (max. ) = 625 mW.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet preview – KSP43

Datasheet Details

Part number KSP43
Manufacturer onsemi
File Size 201.00 KB
Description NPN Epitaxial Silicon Transistor
Datasheet download datasheet KSP43 Datasheet
Additional preview pages of the KSP43 datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor KSP42, KSP43 Features • Collector−Emitter Voltage: ♦ KSP42: VCEO = 300 V ♦ KSP43: VCEO = 200 V • Collector Dissipation: PC (max.) = 625 mW • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector−Base Voltage KSP42 300 V KSP43 200 VCEO Collector−Emitter Voltage KSP42 300 V KSP43 200 VEBO Emitter−Base Voltage 6 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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