onsemi M1MA142KT1
Single Silicon Switching Diode
MAXIMUM RATINGS
(TA = 25°C) Rating Symbol Value Unit CASE 419–04, STYLE 2 SC–70/SOT–323 Reverse Voltage M1MA141KT1 M1MA142KT1 VR 40 Vdc 80 CATHODE 3 Peak Reverse Voltage M1MA141KT1 M1MA142KT1 VRM 40 Vdc 80 Forward Current Peak Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS IF 100 mAdc IFM 225 mAdc IFSM(1) 500 mAdc ANODE NO CONNECTION 12 Rating Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Tstg –55 ~ +150 °CELECTRICAL CHARACTERISTICS
(TA = 25°C) Characteristic Symbol Condition Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Min Max Unit Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage M1MA141KT1 M1MA142KT1 M1MA141KT1 M1MA142KT1 IR VF VR VR = 35 V VR = 75 V IF = 100 mA IR = 100 µA — 0.1 µAdc — 0.1 — 1.2 Vdc 40 — Vdc 80 — Diode Capacitance Reverse Recovery Time (Figure 1) 1. t = 1 SEC 2. trr Test Circuit CD trr(2) VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR — — 2.0 pF 3.0 ns DEVICE MARKING — EXAMPLE Marking Symbol Type No.