M1MA174T1 Datasheet PDF

MAXIMUM RATINGS

Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD Value 100 200 500 200 Unit V mA mA mW 3 CATHODE 1 ANODE 1.6 mW/°C 3 TJ, Tstg –55 to +150 °C 1 2 SC–70/SOT–323 CASE 419 STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol RθJA Max 0.625 Unit °C/mW MARKING DIAGRAM

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 100 µAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) Symbol V(BR) IR – – CT VF trr – – – 25 5.0 4.0 1.0 4.