onsemi MAC16HCDG
Triacs / Silicon Bidirectional Thyristors
FEATURES
● High Commutating di/dt and High Immunity to dv/dt @ 125°C● Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
● Blocking Voltage to 800 Volts
● On−State Current Rating of 16 Amperes RMS at 80°C
● High Surge Current Capability − 150 Amperes
● Industry Standard TO−220 Package for Ease of Design
● Glass Passivated Junctions for Reliability and Uniformity
● These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) VDRM, V (TJ = −40 to 125°C, Sine Wave, VRRM 50 to 60 Hz, Gate Open) MAC16HCD 400 MAC16HCM 600 MAC16HCN 800 On−State RMS Current (Full Cycle Sine Wave 50 to 60 Hz; TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.33 ms) IT(RMS) ITSM I2t 16 A 150 A 93 A2sec Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) PGM 20 W Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.5 W Operating...