MBD101G Datasheet PDF

FEATURES

● Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
● Very Low Capacitance − Less Than 1.0 pF
● High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA
● These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit Reverse Voltage VR Forward Power Dissipation PF TA = 25C MBD101 MMBD101LT1 7.0 V 280 mW 225 Derate above 25C MBD101 MMBD101LT1 2.2 mW/C 1.8 Junction Temperature TJ +150 C Storage Temperature Range Tstg −55 to +150 C Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 mA) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1, page 2) V(BR)R 7.0 10 − V CD − 0.88 1.0 pF Forward Voltage (IF = 10 mA) Reverse Leakage (VR = 3.0 V) VF − 0.5 0.6 V IR − 0.02 0.25 mA Product parametric performance is indicated in the

ELECTRICAL CHARACTERISTICS

for the listed test conditions, unless otherwise noted.