onsemi MBD301
Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes
FEATURES
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● Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301 Pb−Free Packages are Available 30 VOLTS SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES MBD301 MARKING DIAGRAM TO−92 (TO−226AC) CASE 182 STYLE 1 MBD 301 AYWWG G
MAXIMUM RATINGS
MBD301 Rating Reverse Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ Tstg 200 2.0 −55 to +125 −55 to +150 mW mW/°C °C °C MMBD301LT1 Value 30 Unit V 1 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.