MAXIMUM RATINGS
Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR Value 7.0 30 70 120 –55 to +125 –55 to +150 Unit Vdc Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range PF TJ Tstg mW °C °C DEVICE MARKING MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5 Thermal Clad is a trademark of the Bergquist Company. © Semiconductor Components Industries, LLC, 2001 1 November, 2001 – Rev.3 Publication Order Number: MBD110DWT1/D MBD110DWT1 MBD330DWT1 MBD770DWT1 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) MBD110DWT1 MBD330DWT1 MBD770DWT1 CT MBD110DWT1 CT MBD330DWT1 MBD770DWT1 IR MBD110DWT1 MBD330DWT1 MBD770DWT1 NF MBD110DWT1 VF MBD110DWT1 MBD330DWT1 MBD770DWT1 — — — — — 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 — 6.0 — Vdc — — — 0.02 13 9.0 0.25 200 200 — — 0.9 0.5 1.5 1.0 µA nAdc nAdc dB — 0.88 1.0 pF Symbol V(BR)R 7.0 30 70 10 — — — — — pF Min Typ Max Unit Volts Diode Capacitan...
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