onsemi MBR160
The MBR150/160 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. for 10 Seconds Polarity: Cathode Indicated by Polarity Band MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM V MBR150 50 MBR160 60 Working Peak Reverse Voltage DC Blocking Voltage VRWM VR RMS Reverse Voltage MBR150 VR(RMS) 35 V MBR160 42 Average Rectified Forward Current (Note 1) IO (VR(equiv) v 0.2 VR(dc), TL = 90 C, RqJA = 80 C/W, P.C.| Part No. | MBR160 |
|---|---|
| Datasheet | MBR160 Download |
| Manufacturer |  onsemi |
| Description | Axial Lead Rectifiers |
| Buy | Stock & Price |
FEATURES
● Low Reverse Current● Low Stored Charge, Majority Carrier Conduction
● Low Power Loss/High Efficiency
● Highly Stable Oxide Passivated Junction
● These are Pb−Free Devices* Mechanical Characteristics:
● Case: Epoxy, Molded
● Weight: 0.4 Gram (Approximately)
● Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
● Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds
● Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM V MBR150 50 MBR160 60 Working Peak Reverse Voltage DC Blocking Voltage VRWM VR RMS Reverse Voltage MBR150 VR(RMS) 35 V MBR160 42 Average Rectified Forward Current (Note 1) IO (VR(equiv) v 0.2 VR(dc), TL = 90C, RqJA = 80C/W, P.C. Board Mounting, TA = 55C) 1.0 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70C) IFSM 25 A (for one cycle) Operating and Storage Junction Temper...
