onsemi MBRS540T3G
The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode.FEATURES
● Small Compact Surface Mountable Package with J−Bend Leads● Rectangular Package for Automated Handling
● Highly Stable Oxide Passivated Junction
● Excellent Ability to Withstand Reverse Avalanche Energy Transients
● Guard−Ring for Stress Protection
● NRVB Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics
● Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in
● Weight: 217 mg (Approximately)
● Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
● Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
● Polarity: Polarity Band on Plastic Body Indicates Cathode Lead
● ESD Rating: ♦ Machine Model, C (> 400 V) ♦ Human Body Model, 3B (> 8000 V)
● Device Meets MSL 1 Requirements SCHOTTKY BARRIER RECTIFIER 5.0 AMPERES, 40 VOL...