onsemi MBT35200
High Current Surface Mount PNP Silicon Switching Transistor
| Part No. | MBT35200 |
|---|---|
| Datasheet | MBT35200 Download |
| Manufacturer |  onsemi |
| Description | High Current Surface Mount PNP Silicon Switching Transistor |
| Buy | Stock & Price |
APPLICATIONS
A Device of the mX™ Family 35 VOLTS 2.0 AMPS PNP TRANSISTORMAXIMUM RATINGS
(TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Collector Current — Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max –35 –55 –5.0 –2.0 –5.0 Unit Vdc Vdc Vdc Adc A 4 EMITTER 3 BASE COLLECTOR 1, 2, 5, 6 HBM Class 3 MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead #1 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 9 Symbol PD (Note 1.) Max 625 5.0 RθJA (Note 1.) PD (Note 2.) 200 1.0 8.0 RθJA (Note 2.) RθJL PDsingle (Notes 2. & 3.) TJ, Tstg 120 80 1.75 –55 to +150 Unit mW mW/°C °C/W W mW/°C...
