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MBT3906DW1 Datasheet PDF

onsemi MBT3906DW1

The MBT3906DW1 device is a spin −off of our popular SOT−23/SOT−323 three −leaded device. It is designed for general purpose amplifier applications and is housed in the SOT −363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low −power surface mount applications where board space is at a premium.
Part No. MBT3906DW1
Datasheet MBT3906DW1 Download
Manufacturer
onsemi
Description Dual General Purpose Transistor
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MBT3906DW1 datasheet page 1 preview

FEATURES

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● hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7−inch/3,000 Unit Tape and Reel S Prefix for Automotive and Other

APPLICATIONS

Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SOT−363/SC−88 CASE 419B STYLE 1 (3) (2) (1) Q1 Q2 (4) (5) (6) MARKING DIAGRAM 6

MAXIMUM RATINGS

Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value −40 −40 −5.0 −200 Unit Vdc Vdc Vdc mAdc A2 M G G 1 A2 = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) HBM Class 2 MM Class B Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
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