onsemi MCH6436
the MCH6436 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.FEATURES
● Low On-Resistance● 1.8V Drive
● High Speed Switching
● ESD Diode-Protected Gate
● Pb-Free and RoHS Compliance Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (1500mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (1500mm2 × 0.8mm) Symbol RθJA Value 30 ±12 6 24 Unit V V A A 1.5 150 −55 to +150 W °C °C Value Unit 83.3 °C/W VDSS 30V RDS(on) Max 34mΩ@ 4.5V 49mΩ@ 2.5V 69mΩ@ 1.8V ID Max 6A Electrical Connection N-Channel 1, 2, 5, 6 1 : Drain 3 2 : Drain 3 : Gate 4 : Source 5 : Drain 4 6 : Drain LOT No. LOT No. Packing Type : TL Marking ZK TL Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.