onsemi MCR08B
Sensitive Gate Silicon Controlled Rectifiers
FEATURES
● Sensitive Gate Trigger Current● Blocking Voltage to 600 V
● Glass Passivated Surface for Reliability and Uniformity
● Surface Mount Package
● These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, RGK = 1 kW TJ = 25 to 110°C) MCR08B MCR08M VDRM, VRRM 200 600 V On-State Current RMS (All Conduction Angles; TC = 80°C) IT(RMS) 0.8 A Peak Non-repetitive Surge Current ITSM 8.0 A (1/2 Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Considerations (t = 8.3 ms) I2t 0.4 A2s Forward Peak Gate Power (TC = 80°C, t = 1.0 ms) Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Rating PGM 0.1 W PG(AV) 0.01 W TJ −40 to +110 °C Tstg −40 to +150 °C Symbol Value Unit Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 RqJA 156 °C/W Thermal Resistance, Junction−to−Tab Measured on...